The article title

A.A. Ivanov1, A.B. Petrov*,2, B.C. Sidorov3 The speaker's name must be underlined

1 Institute for Automation and Control Processes, 5 Radio St., Vladivostok 690041, Russia

2 Institute of Semiconductor Physics of SB RAS, 13 pr. Lavrentieva, Novosibirsk 630090, Russia

3 Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950, Russia

*e-mail: corresponding_autor_mail@gmail.com

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1. Introduction

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2. Experiment

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Table I. Parameters of Samples

Sample	Substrate	Implanted dose, (cm-2)	Conduc-tivity type	Resistivity, (Ohm cm)
A	Si(111)	1016	p	20
B	Si(111)	1.8×1017	p	20
C	Si(100)	1015	n	4.5
D	Si(100)	1016	n	4.5
E	Si(100)	1.8×1017	n	4.5
3. Results and discussions

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Fig. 1. Photoluminescence spectra of sample D. There is a red shift of the peak position with increasing of temperature.

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Fig. 2. Bright-field TEM image of the Cr-implanted Si layer (( = 3(1016 cm-2) after PLA (W = 1.6 J/cm2).

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4. Conclusions

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Acknowledgements

Place your acknowledgements here

References

K. Oyoshi, D. Lenssen, R. Carrius, S. Mantl. Thin Solid Films 381(2001)194.

T. Suemasu, T. Fujii, K. Takakura, F. Hasegawa. Thin Solid Films 381(2001)209.

R. Bayazitov, R. Batalov, R. Nurutdinov, V. Shustov, P. Gaiduk, I. Dezsi, E. Kotai. Nucl. Instr. Meth. B 24(2005)224.

K. Oyoshi, D. Lenssen, R. Carius, S. Mantl. Thin Solid Films 381(2001)202

J. Chrost, J. J. Hinarejos, E. G. Michel, R. Miranda. Surf. Sci. 330(1995)34.

Sixth Asian School-Conference on Physics and

Technology of Nanostructured Materials

Vladivostok, Russia, 25 – 29 April, 2022	Article number

2

1

Article number

ASCO-NANOMAT-2018

Sveta

2021-10-20

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