The article title

A.A. Ivanov1, A.B. Petrov*,2, B.C. Sidorov3 The speaker's name must be underlined

1 Institute for Automation and Control Processes, 5 Radio St., Vladivostok 690041, Russia

2 Institute of Semiconductor Physics of SB RAS, 13 pr. Lavrentieva, Novosibirsk 630090, Russia

3 Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950, Russia

*e-mail: corresponding_autor_mail@gmail.com

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(ASCO-NANOMAT_TableCaption Style) Table I. Parameters of Samples

Sample	Substrate	Implanted dose, (cm-2)	Conduc-tivity type	Resistivity, (Ohm cm)
A	Si(111)	1016	p	20
B	Si(111)	1.8×1017	p	20
C	Si(100)	1015	n	4.5
D	Si(100)	1016	n	4.5
E	Si(100)	1.8×1017	n	4.5
ASCO-NANOMAT_TableText Style

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Acknowledgements (ASCO-ANOMAT_SectionTitle Style)

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References

ASCO-NANOMAT_Reference Style

K. Oyoshi, D. Lenssen, R. Carrius, S. Mantl. Thin Solid Films 381(2001)194.

T. Suemasu, T. Fujii, K. Takakura, F. Hasegawa. Thin Solid Films 381(2001)209.

R. Bayazitov, R. Batalov, R. Nurutdinov, V. Shustov, P. Gaiduk, I. Dezsi, E. Kotai. Nucl. Instr. Meth. B 24(2005)224.

K. Oyoshi, D. Lenssen, R. Carius, S. Mantl. Thin Solid Films 381(2001)202

J. Chrost, J. J. Hinarejos, E. G. Michel, R. Miranda. Surf. Sci. 330(1995)34.