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Program of the 9-th Russia Japan Seminar on Semiconductor Surfaces (RJSSS-9)

SUNDAY, SEPTEMBER 26, 2010

20:00-21:30 Arrival to Vladivostok airport, transportation to the hotel

21:30-22:00 Accomodation, registration

22:00-23:00 DINNER

MONDAY, SEPTEMBER 27, 2010

8:00 BREAKFAST

8:30 Bus to the Conference Hall (Presidium of FEB RAS)

9:00 Welcome remarks

SESSION A: chaired by S. Hasegawa and A.A. Saranin

9:20 A-1 Surface structure analysis by stereo-photograph of atomic arrangement

H. Daimon, ¹ F. Matsui, ¹ Tomohiro Matsushita²

[1] Nara Institute of Science and Technology (NAIST), Nara, Japan

[2] Japan Synchrotron Radiation Research Institute (JASRI), Hyogo, Japan

9:40 A-2 Dynamics of atoms in low-dimensional structures on crystalline Si surfaces

A.V. Zotov, A.A. Saranin

Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

10:00 A-3 Hydrogen termination and metal epitaxy on Si(110)

M. Yoshimura, A. Visikovskiy, and Ian T. Clark

Toyota Technological Institute Nagoya, Japan

10:20 A-4 Formation of Au-In intermetallic reconstruction

D.V. Gruznev,¹ A.V. Matetskiy,¹ A.V. Zotov,^1,2,3 A.A. Saranin^1,2

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[2] Faculty of Physics and Engineering, Far Eastern State University, Vladivostok, Russia

[3] Department of Electronics, Vladivostok State University of Economics and Service,

Russia

10:40 A-5 Study of surface conductivity of (Au,In)/Si(111) system

D.A. Tsukanov^1,2, L.V. Bondarenko¹, E.A. Borisenko¹, D.V.Gruznev¹, A.V. Zotov^1,2

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[2] Far Eastern State University, Vladivostok, Russia

11:00 - 11:20 COFFEE BREAK

SESSION B: chaired by T. Hashizume and D.A. Tsukanov

11:20 B-1 Vortices in nano-size superconductors studied by low-temperature STM/STS

Y. Hasegawa, T. Nishio, T. An, and T. Eguchi

The Institute for Solid State Physics, The University of Tokyo, Japan

11:40 B-2 CrSi₂ nanocrystallite migration during silicon cap growth and its influence on defect formation

N.G. Galkin¹, E.A. Chusovitin¹, S.A. Dotsenko¹, L. Dosza², B. Pecz², L. Dobos²

[1] Institute of Automation and Control Processes FEB RAS, Vladivostok, Russia

[2] Research Institute for Technical Physics and Materials Science, Budapest, Hungary

12:00 B-3 Preparation of an ultra-clean hydrogen terminated Si(111)1x1 surface and reobservation of surface phonon

H. Kato, T. Taoka, P. Murugan¹, Y. Kawazoe¹, T. Yamada², A. Kasuya³ and S. Suto

Department of Physics, Tohoku University, Sendai, Japan

[1] Institute of Materials Research, Tohoku University, Sendai, Japan

[2] RIKEN, Saitama, Japan

[3] Int. Advanced Research and Education Org., Tohoku University, Sendai, Japan

12:20 B-4 A new approach to growth of multilayer Si/β-FeSi₂ NCs/Si/…/Si nanoheterostructures with high luminescence and thermoelectrical properties

N.G. Galkin¹, E.A. Chusovitin¹, T.S. Shamirsaev², A.K. Gutakovski², A.V. Latyshev²

[1] Institute of Automation and Control Processes FEB RAS, Vladivostok, Russia

[2] Institute of Semiconductor Physics, SB of RAS, Novosibirsk, Russia

12:40-13:40 LUNCH in VENETS cafe

SESSION C: chaired by M. Yoshimura and A.V. Zotov

14:00 C-1 Scanning probe microscopy of organic semiconductor surfaces

T. Hashizume^1,2,3, S. Heike¹, Y. Iwadate³, T. Ushiyama³, S. Kubota³, N. Fukui²,

T. Hitosugi²

[1] Advanced Research Laboratory, Hitachi, Ltd., Saitama, Japan

[2] WPI-AIMR, Tohoku University, Sendai, Japan

[3] Department of Physics, Tokyo Institute of Technology, Tokyo, Japan

14:20 C-2 QMC studies of adsorption on graphene and Al(100) surface

C.-M. Wei and C.-R. Hsing

Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan

14:40 C-3 Formation of epitaxial graphene on low-index Si substrates

M. Suemitsu and H. Fukidome

Tohoku University, Sendai, Japan

15:00 C-4 Interaction of C₆₀ fullerene with defects if the Si(111)√3×√3-In reconstruction

A.V. Matetskiy,¹ D.V. Gruznev,¹ I.V. Gvozd,¹ A.V. Zotov,^1,2,3 A.A. Saranin^1,2

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[2] Faculty of Physics and Engineering, Far Eastern State University, Vladivostok, Russia

[3] Department of Electronics, Vladivostok State University of Economics and Service,

Vladivostok, Russia

15.30 Bus to the Institute of Automation and Control Processes

16:00-18:30 LABORATORY TOURS & POSTER SESSION

P-1 Development of the UHV-ultra low temperature 4-probe SPM and functional probes

Y. Miyatake, K. Morita, N.Sakamaki, T. Miura, T. Sasaki and T. Nagamura

Unisoku Co., Ltd., Osaka Japan

P-2 Atomic and electronic structures of Ag/Si(100) c(6Ч2) surface: A first-principles study

A. Alekseev¹, V.G. Kotlyar¹, O.A. Utas¹, D.V. Gruznev¹, A.V. Matetskiy¹, A.V. Zotov^1,2,3, A.A. Saranin^1,2

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[2] Far Eastern State University, Vladivostok, Russia

[3] Vladivostok State University of Economics and Service, Vladivostok, Russia

P-3 A modular approach to high pressure photoelectron spectroscopy

B. Krцmker¹, A. Janzen¹, K. Winkler¹, Y. Enta² and R. Oiwa³

[1] Omicron NanoTechnology GmbH, Taunusstein,Germany.

[2] Graduate School of Science and Technology, Hirosaki University, Hirosaki, Japan

[3] Omicron NanoTechnology Japan, Tokyo, Japan

P-4 Effect of surface potential relief on self-assembly of organic molecules

D.V. Gruznev,¹ D.N. Chubenko,¹ A.V. Zotov,^1,2,3 A.A. Saranin^1,2

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[2] Faculty of Physics and Engineering, Far Eastern State University, Vladivostok, Russia

[3] Department of Electronics, Vladivostok State University of Economics and Service, Russia

P-5 Structure and electronic states of the pyrazine-chemisorbed Si(001) surface

H. Yokohara, C. Kunihara, M. Shimomura

Research Institute of Electronics, Shizuoka University, Japan

P-6 Fullerenes on a flexible layer

I.V. Gvozd,¹ A.V. Matetskiy,¹ D.V. Gruznev,¹ A.V. Zotov,^1,2,3 A.A. Saranin^1,2

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[2] Faculty of Physics and Engineering, Far Eastern State University, Vladivostok, Russia

[3] Department of Electronics, Vladivostok State University of Economics and Service, Russia

P-7 Coadsorption of indium and nitrogen-containing molecules on silicon

C. Kunihara, H. Yokohara, K. Ota, M. Shimomura

Research Institute of Electronics, Shizuoka University, Japan

P-8 Computer simulation of vacancy migration path on the defect Si(111)√3×√3-In surface

Yu. Luniakov

Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

P-9 In situ detection of the spin Hall effect in ultrathin bismuth films

T. Tono, T. Hirahara, S. Hasegawa

Department of Physics, University of Tokyo, Tokyo, Japan

P-10 Magnetic properties of iron oxide films on SiO₂/Si surface

T.A. Pisarenko, V.V. Korobtsov, V.V. Balashev, V.A. Vikulov, E.A. Chusovitin,

L.A. Chebotkevich¹

Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[1] Far Eastern State University, Vladivostok, Russia

P-11 Growth of Ca₂Si film on Si(111) substrate and on preliminary formed Mg surface phase and bulk Mg₂Si film

S.A. Dotsenko¹, D.V. Fomin², K.N. Galkin¹, D.L. Goroshko¹ and N.G. Galkin¹

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[2] Amur State University, Blagoveshchensk, Russia

P-12 The dependence of magnetization reversal processes on the size of nanostructure’s arrays

M. Stebliy¹, A. Ognev^1,2, , A. Samardak¹, L. Chebotkevich^1,2

[1] Laboratory of thin film technologies, FENU, Vladivostok, Russia

[2] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

P-13 Spin configuration and magnetization reversal in ferromagnetic nanostripes

E.V. Sukovatitsina¹, A.S. Samardak¹, A.V. Ognev^1,2, M.E. Stebliy¹, L.A. Chebotkevich^1,2

[1] Far Eastern National University, Vladivostok, Russia

[2] Institute of Automation and Control Processes, RAS, Vladivostok, Russia

P-14 Soliton propagation in simulated “ferromagnetic-isolator-semiconductor” nanostructures

A.S. Samardak¹, M.V. Anisimova¹, E.V.Sukovatitsina¹, A.V. Ognev^1,2, A. Nogaret³

[1] Far Eastern National University, Vladivostok, Russia

[2] Institute of Automation and Control Processes, RAS, Vladivostok, Russia

3] University of Bath, UK

P-15 Investigation of spin-valves based on magnetic tunnel junctions

E.V. Sukovatitsina¹, A.S. Samardak¹, A.V. Ognev^1,2, E. Wahlstrцm ³, L.A. Chebotkevich ^1,2

[1] Far Eastern National University, Vladivostok, Russia

[2] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[3] Department of Physics, NTNU, Trondheim, Norway

P-16 Interface formation and growth of nanofilms in the Cu- and Fe - Si(001) systems

S.A. Kitan’ ^{1, 2}, V.M. Iliyaschenko ^{1, 2}, D.Yu. Fillipov ², N. I. Plusnin ^{1, 2}

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[2] Vladivostok State University of Economics and Service, Vladivostok, Russia

P-17 The growth of multilayer structures on Si(001) consisted from Cu, Fe and Co nanolayers

N.A. Tarima ^{1, 2}, V.M. Iliyaschenko ^{1, 2}, S.A. Kitan’ ^{1, 2}, N. I. Plusnin ^{1, 2}

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia,

[2] Vladivostok State University of Economics and Service, Vladivostok, Russia

P-18 Surface conductivity of Au-films on Si(111)5,55Ч5,55-Cu surface under oxidation

D.A. Tsukanov, L.V. Bondarenko, E.A. Borisenko

Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

18.40 Bus to the Welcome Dinner

19:00 WELCOME DINNER

TUESDAY, SEPTEMBER 28, 2010

09:00-18:00 EXCURSION DAY

09:30-12:30 City tour (bus starts from the hotel)

12:30-19:00 Boat tour and a picnic (tourist center at the sea shore)

Wednesday, SEPTEMBER 29, 2010

8:50 Bus to the Conference Hall

SESSION D: chaired by H. Daimon and N.G. Galkin

9:20 D-1 Surface energy band diagrams of CVD diamond (001) surface conductive layers

S. Kono¹,T. Saito¹, S.H. Kang² , W.Y. Jung² , B.Y. Kim² , H. Kawata¹, T. Goto¹,

Y. Kakefuda¹ and H.W. Yeom²

[1] IMRAM, Tohoku University, Sendai, Japan

[2] Inst. Phys. & Appl. Phys., Yonsei University, Seoul, Korea

9:40 D-2 Optical features of the Ag nanoclusters grown on ITO

V.A. Vikulov¹, M.V. Ivanchenko¹, A.M. Maslov¹, V.V. Korobtsov¹, I.M. Doroshenkov²

[1] Institute of Automation and Control Processes FEB RAS, Vladivostok, Russia

[2] Maritime State University, Vladivostok, Russia

10:00 D-3 Real space imaging of carrier dynamics in semiconductors by laser-combined scanning tunneling microscopy

H. Shigekawa

Institute of Applied Physics, CREST-JST, University of Tsukuba, Tsukuba, Japan

10:20 D-4 Doping of thin magnesium silicide using antimony surface phase

D. Goroshko, K. Galkin, N. Galkin

Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

10:40 D-5 Structural characterization of Fe₃O₄ thin films grown on SiO₂/Si substrate

V.V. Balashev, V.V. Korobtsov, T.A. Pisarenko, V.A. Vikulov, A.A. Dimitriev,

E.A. Chusovitin

Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

11:00-11:20 COFFEE BREAK

SESSION E: chaired by Y. Hasegawa and D.V. Gruznev

11:20 E-1 Low temperature graphene growth on SiC(0001) and SiC(000-1) via

Ni-silicidation process

A. Visikovskiy¹, T. Yoneda², M. Shibuya¹, K. Mitsuhara¹, Y. Hoshino³ and Y. Kido¹

[1] Ritsumeikan University, Kusatsu, Shiga, Japan

[2] Fukui National College of Technology, Sabae, Fukui, Japan

[3] Kanagawa University, Hiratsuka, Kanagawa, Japan

11:40 E-2 Variable termination of MnSi/Si(111)√3×√3 films and its effect on surface properties

S.G.Azatyan,¹ O.A.Utas,¹ N.V.Denisov,¹ A.V.Zotov,^1,2,3 and A.A.Saranin^1,2

[1] Institute of Automation and Control Processes FEB RAS, Vladivostok, Russia

[2] Faculty of Physics and Engineering, Far Eastern State University, Vladivostok, Russia

[3] Department of Electronics, Vladivostok State University of Economics and Service, Vladivostok, Russia

12:00 E-3 Strain in the heteroepitaxal growth of Si and Ge system

Y. Shigeta¹, I. Mochizuki^{1, 2} and R. Negishi^{1, 3}

[1] Graduate School of NanobioScience, Yokohama City University, Yokohama, Japan

[2] Advanced Science Research Center, Japan Atomic Energy Agency, Takasaki, Japan

[3] Department of Applied Physics, Osaka University, Osaka, Japan

12:20 E-4 Two approaches to controlled growth of Me/Si structures in UHV

A. Gouralnik,¹ N. Galkin^1,2, V. Ivanov² , Eu. Pustovalov², V. Plotnikov²,

A. Cherednichenko²

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[2] Far-East Federal University, Physics Dpt., Vladivostok, Russia

12:40-13:50 LUNCH IN VENETS cafe

SESSION F: chaired by C.-M. Wei and D.L. Goroshko

14:00 F-1 Effect of the ferromagnetic coupling on remagnetisation processes in trilayer nanodisks

A. Ognev^1,2, M. Stebliy¹, A. Samardak¹, L. Chebotkevich^1,2

[1] Laboratory of thin film technologies, FENU, Vladivostok, Russia

[2] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

14:20 F-2 Study on quantum well states in ultrathin metallic films on semiconductor by REM-4PP

H. Minoda, T. Sawada, T. Fujimura

Tokyo University of Agriculture and Technology, Tokyo, Japan

14:40 F-3 Magnetic properties of 2D Co nanostructure on Cu/Si

Yu.P.Ivanov^1,2, K.S. Ermakov¹, A.V. Davydenko¹, A.I. Iljin¹, L.A.Chebotkevich^1,2

[1] Far Eastern National University, Vladivostok, Russia

[2] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

15:00 F-4 Surface structures and electronic states of ultra-thin Ag(111) films on Si(111)7x7 substrates

H. Hirayama

Dept. of Materials Science & Engineering, Tokyo Institute of Technology, Yokohama,

Japan

15:20-15:40 COFFEE BREAK

SESSION G: chaired by S.Kono and V.A. Vikulov

15:40 G-1 Interface formation and control of growth processes of subnanosize thickness

films

N.I. Plusnin^1,2

[1] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

[2] Vladivostok State University of Economics and Service, Vladivostok, Russia

16:00 G-2 Magnetic and magnetoresistance properties of multilayer epitaxial films Co/Cu/Co/Cu/Si

A.V. Davydenko¹, Yu.P.Ivanov^1,2, K.S. Ermakov¹, L.A.Chebotkevich^1,2

[1] Far Eastern National University, Vladivostok, Russia

[2] Institute of Automation and Control Processes, FEB RAS, Vladivostok, Russia

16:20 G-3 Topological surface states Bi alloys on Si surfaces

T. Hirahara, Y. Sakamoto, and S. Hasegawa

University of Tokyo, Department of Physics, Tokyo, Japan

16:40 Closing remarks

17:00 Bus to the hotel

18:30 Bus to the Farewell Party

19:00 FAREWELL PARTY

Thursday, SEPTEMBER 30, 2010

Departure

11:30 Bus to the airport (Fl. XF 8827, 14:30)